Manufacturer Part Number
IXTA2R4N120P
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS Compliant
TO-263AA Packaging
Operating Temperature Range: -55°C to 150°C
Drain to Source Voltage (Vdss): 1200 V
Maximum Gate-Source Voltage (Vgs(max)): ±20 V
On-State Resistance (Rds(on)): 7.5 Ω @ 500 mA, 10 V
Technology: MOSFET (Metal Oxide)
Continuous Drain Current (Id): 2.4 A @ 25°C
Input Capacitance (Ciss): 1207 pF @ 25 V
Maximum Power Dissipation: 125 W @ 25°C
Product Advantages
High Drain to Source Voltage
Low On-State Resistance
Wide Operating Temperature Range
Key Technical Parameters
N-Channel MOSFET
Threshold Voltage (Vgs(th)): 4.5 V @ 250 A
Drive Voltage Range: 10 V
Gate Charge (Qg): 37 nC @ 10 V
Surface Mount Packaging
Quality and Safety Features
RoHS Compliant
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB Packaging
Application Areas
Power Switching Applications
Power Supply Circuits
Motor Control
Industrial Electronics
Product Lifecycle
Current production
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage rating
Low on-state resistance
Wide operating temperature range
Surface mount packaging for easy integration
RoHS compliance for environmental sustainability