Manufacturer Part Number
IXKH30N60C5
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-power N-channel MOSFET transistor
Product Features and Performance
600V drain-source voltage
30A continuous drain current rating
Low on-resistance (125mΩ typical)
Fast switching speed
Optimized for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent power density
High efficiency
Reliable performance
Ease of paralleling for higher current handling
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 125mΩ @ 16A, 10V
Drain current (Id): 30A @ 25°C
Input capacitance (Ciss): 2500pF @ 10V
Gate charge (Qg): 70nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for reliable long-term operation
Robust TO-247 package
Compatibility
Suitable for various high-power, high-efficiency applications such as power supplies, motor drives, and renewable energy systems
Application Areas
Power conversion
Motor control
Renewable energy systems
Industrial automation
Product Lifecycle
Actively supported product
No plans for discontinuation
Several Key Reasons to Choose This Product
High voltage and current handling capability
Excellent power efficiency and density
Reliable and robust design
Easy paralleling for higher current requirements
Wide operating temperature range (-55°C to 150°C)