IXKN45N80C - IXYS

Manufacturer Part Number

IXKN45N80C

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor

Part of the CoolMOS series

Product Features and Performance

Drain-to-source voltage (Vdss) of 800 V

Maximum gate-to-source voltage (Vgs) of ±20 V

Maximum on-resistance (Rds(on)) of 74 mΩ @ 44 A, 10 V

Continuous drain current (Id) of 44 A at 25°C (Tc)

Maximum power dissipation of 380 W at 25°C (Tc)

Gate charge (Qg) of 360 nC @ 10 V

Product Advantages

Low on-resistance for high efficiency

High voltage rating for use in high-voltage applications

Excellent thermal performance for power-dense designs

Robust and reliable design

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: N-Channel

Threshold voltage (Vgs(th)) of 3.9 V @ 4 mA

Operating temperature range of -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Housed in a SOT-227B package

Compatibility

Suitable for use in a variety of power electronics and high-voltage applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

High voltage rating for use in demanding applications

Low on-resistance for efficient power conversion

Excellent thermal performance and power handling capability

Robust and reliable design for long-lasting operation

RoHS3 compliance for environmental responsibility