Manufacturer Part Number
MTB50P03HDLT4G
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a P-channel MOSFET transistor.
Product Features and Performance
50A continuous drain current (Tc) rating
Low on-resistance of 25mOhm @ 5V, 25A
Wide operating temperature range of -55°C to 150°C
High power dissipation of 125W (Tc)
Fast switching with a max gate charge of 100nC @ 5V
Product Advantages
High current handling capability
Low on-resistance for efficient power delivery
Broad temperature range for versatile applications
High power dissipation for high-power uses
Fast switching performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±15V
Input Capacitance (Ciss): 4900pF @ 25V
FET Type: P-Channel MOSFET
Quality and Safety Features
RoHS3 compliant
DPAK package for surface mount assembly
Compatibility
This MOSFET is compatible with a wide range of electronic systems and power conversion applications.
Application Areas
Power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
The MTB50P03HDLT4G is an actively supported product, and there are no plans for discontinuation. Replacements and upgrades may be available from onsemi in the future.
Key Reasons to Choose This Product
High current handling for demanding applications
Low on-resistance for efficient power conversion
Wide temperature range for rugged use
High power dissipation for high-power applications
Fast switching performance for efficient operation
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