Manufacturer Part Number
IXGH40N60C2D1
Manufacturer
IXYS Corporation
Introduction
High-speed insulated gate bipolar transistor (IGBT)
Optimized for high-frequency switching applications
Product Features and Performance
High switching speed
Low conduction losses
High power density
Rugged and reliable design
Capable of operating at high temperatures
Product Advantages
Efficient and high-performance power conversion
Suitable for a wide range of applications
Reliable and durable operation
Key Technical Parameters
Collector-Emitter Voltage (Max): 600 V
Collector Current (Max): 75 A
Collector-Emitter Saturation Voltage (Max): 2.7 V
Reverse Recovery Time: 25 ns
Gate Charge: 95 nC
Switching Energy: 200 J (off)
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
Stringent quality control measures
Complies with relevant safety standards
Compatibility
Suitable for use in various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating systems
Product Lifecycle
This product is currently in production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
High-speed and efficient power switching capabilities
Rugged and reliable design for demanding applications
Wide operating temperature range
Optimized for high-frequency switching
Proven track record of performance and reliability
IXGH40N30BD1IXYS / Littelfuse