Manufacturer Part Number
IXGH48N60B3D1
Manufacturer
IXYS Corporation
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Suitable for various power conversion and control applications
Product Features and Performance
600V voltage rating
300W power rating
-55°C to 150°C operating temperature range
Low Vce(on) of 1.8V @ 15V, 32A
Fast reverse recovery time of 100ns
115nC gate charge
280A pulsed collector current
840J turn-on and 660J turn-off switching energy
Product Advantages
Excellent power handling capability
Wide operating temperature range
Low conduction and switching losses
Robust and reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Reverse Recovery Time (trr): 100ns
Gate Charge: 115nC
Current Collector Pulsed (Icm): 280A
Quality and Safety Features
ROHS3 compliant
TO-247AD package
Compatibility
Can be used in a wide range of power conversion and control applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Solar inverters
UPS systems
Product Lifecycle
This product is currently in production and widely available
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Low conduction and switching losses
Robust and reliable performance
Compliance with RoHS regulations
Widely compatible with various applications
IXGH50N120B3IXYS / Littelfuse