Manufacturer Part Number
IXGH48N60A3
Manufacturer
IXYS Corporation
Introduction
IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Designed for high power applications like motor drives, power supplies, inverters, and converters
Product Features and Performance
High voltage rating of 600V
High current rating of 120A
Low on-state voltage drop of 1.35V
Fast switching with turn-on time of 25ns and turn-off time of 334ns
High power handling capability of 300W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Reliable and durable performance
Compact and space-saving design
Suitable for high power, high frequency applications
Key Technical Parameters
IGBT Type: PT (Punch Through)
Collector-Emitter Breakdown Voltage (Max): 600V
Collector Current (Max): 120A
On-State Voltage Drop (Max): 1.35V
Gate Charge: 110nC
Pulsed Collector Current (Max): 300A
Switching Energy: 950μJ (on), 2.9mJ (off)
Quality and Safety Features
RoHS3 compliant
TO-247AD package for reliable thermal management
Compatibility
Suitable for various power electronics applications like motor drives, power supplies, inverters, and converters
Application Areas
Industrial automation
Power generation and distribution
Renewable energy systems
Transportation (e.g., electric vehicles, trains)
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from IXYS
Key Reasons to Choose This Product
High power handling and efficiency
Fast and reliable switching performance
Robust and durable design
Versatile application compatibility
Compliance with modern safety and environmental standards
IXGH40N6B2IXYS / Littelfuse