Manufacturer Part Number
IXGH40N60B2
Manufacturer
IXYS Corporation
Introduction
High-speed insulated gate bipolar transistor (IGBT) for power electronic applications
Product Features and Performance
600V IGBT with low conduction and switching losses
Optimized for fast switching applications
Low gate charge and high switching speed
Capable of handling high current and power
Product Advantages
Excellent efficiency
High reliability
Compact design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 75A
Collector-Emitter Saturation Voltage (Max): 1.7V
Gate Charge: 100nC
Pulse Collector Current (Max): 200A
Turn-On/Turn-Off Delay Time: 18ns/130ns
Quality and Safety Features
Robust design for high-reliability operation
Complies with international safety standards
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Inverters
Motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available, no plans for discontinuation
Upgrade options and replacements available if needed
Key Reasons to Choose This Product
Excellent efficiency and high reliability
Fast switching speed and low losses
Compact and robust design
Suitable for a variety of power electronic applications
IXGH40N6B2IXYS / Littelfuse