Manufacturer Part Number
IXGH40N120C3D1
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
RoHS3 Compliant
TO-247AD Package
GenX3 Series
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 380 W
IGBT Type: PT
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 75 A
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Reverse Recovery Time (trr): 100 ns
Gate Charge: 142 nC
Current Collector Pulsed (Icm): 180 A
Switching Energy: 1.8mJ (on), 550J (off)
Td (on/off) @ 25°C: 17ns/130ns
Product Advantages
High power handling capability
Fast switching performance
Low conduction losses
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 75 A
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Reverse Recovery Time (trr): 100 ns
Gate Charge: 142 nC
Current Collector Pulsed (Icm): 180 A
Switching Energy: 1.8mJ (on), 550J (off)
Td (on/off) @ 25°C: 17ns/130ns
Quality and Safety Features
RoHS3 Compliant
TO-247AD Package for reliable mounting and heat dissipation
Compatibility
Suitable for various power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Mature product, no discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High power handling capability up to 380 W
Fast switching performance with low conduction losses
Reliable and robust design in a widely compatible package
Suitable for a variety of power electronic applications
IXGH40N30SIXYS / LittelfuseIGBT Module