Manufacturer Part Number
IXFR66N50Q2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high voltage rating.
Product Features and Performance
Optimized MOSFET design for high efficiency and fast switching
Capable of high-current and high-voltage operation
Designed for use in power electronics applications
Product Advantages
Excellent thermal performance and power dissipation
Robust construction for reliable operation
Versatile and suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 85mΩ @ 33A, 10V
Continuous Drain Current (Id): 50A @ 25°C (Tc)
Input Capacitance (Ciss): 9125pF @ 25V
Power Dissipation (Pd): 500W @ 25°C (Tc)
Quality and Safety Features
MOSFET technology provides high reliability and ruggedness
Designed and manufactured to meet strict quality standards
Suitable for use in safety-critical applications
Compatibility
Compatible with a wide range of power electronics circuits and systems
Can be used as a direct replacement for similar MOSFET devices
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and widely available
Replacement or upgrade options may become available in the future as technology evolves
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable construction
Versatile and suitable for a wide range of applications
Competitive pricing and availability