Manufacturer Part Number
IXFT32N50Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET
Suitable for various power electronics applications
Product Features and Performance
High breakdown voltage of 500V
Very low on-resistance of 160mΩ
High continuous drain current of 32A
Wide operating temperature range of -55°C to 150°C
High input capacitance of 4925pF
Maximum power dissipation of 360W
Product Advantages
Excellent efficiency and performance
Reliable and robust design
Suitable for high-voltage and high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 160mΩ @ 16A, 10V
Continuous Drain Current (Id): 32A
Input Capacitance (Ciss): 4925pF @ 25V
Power Dissipation (Ptot): 360W
Quality and Safety Features
MOSFET technology for high reliability
Suitable for harsh environments
Meets relevant safety and quality standards
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial equipment
Power conversion systems
Renewable energy systems
Electric vehicles
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent efficiency and performance
High power handling capability
Reliable and robust design
Suitable for a wide range of power electronics applications
Availability of technical support and resources from the manufacturer