IXFT12N100Q - IXYS

Manufacturer Part Number

IXFT12N100Q

Manufacturer

IXYS Corporation

Introduction

The IXFT12N100Q is a high-performance N-Channel MOSFET transistor from the HiPerFET series by IXYS Corporation.

Product Features and Performance

Operates in the temperature range of -55°C to 150°C (TJ)

Supports a Drain-to-Source Voltage (Vdss) of up to 1000V

Maximum Gate-to-Source Voltage (Vgs) of ±20V

Low On-Resistance (Rds(on)) of 1.05Ω at 6A, 10V

Continuous Drain Current (Id) of 12A at 25°C (Tc)

Input Capacitance (Ciss) of 2900pF at 25V

Maximum Power Dissipation of 300W at 25°C (Tc)

Product Advantages

High voltage, high current handling capability

Low on-resistance for improved efficiency

Wide temperature operating range

Suitable for various high-power switching applications

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Vgs(th) (Max) of 5.5V at 4mA

Gate Charge (Qg) of 90nC at 10V

Quality and Safety Features

Hermetically sealed TO-268AA package for enhanced reliability

Designed and tested to meet industry safety standards

Compatibility

Compatible with a wide range of high-power electronic circuits and systems

Application Areas

Switching power supplies

Motor drives

Inverters

High-voltage power conversion

Industrial and automotive electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available from IXYS or other manufacturers

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for improved efficiency

Wide temperature operating range

Reliable and safe performance in demanding applications

Compatibility with a variety of high-power electronic systems