Manufacturer Part Number
IXFT12N100Q
Manufacturer
IXYS Corporation
Introduction
The IXFT12N100Q is a high-performance N-Channel MOSFET transistor from the HiPerFET series by IXYS Corporation.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C (TJ)
Supports a Drain-to-Source Voltage (Vdss) of up to 1000V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Low On-Resistance (Rds(on)) of 1.05Ω at 6A, 10V
Continuous Drain Current (Id) of 12A at 25°C (Tc)
Input Capacitance (Ciss) of 2900pF at 25V
Maximum Power Dissipation of 300W at 25°C (Tc)
Product Advantages
High voltage, high current handling capability
Low on-resistance for improved efficiency
Wide temperature operating range
Suitable for various high-power switching applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) (Max) of 5.5V at 4mA
Gate Charge (Qg) of 90nC at 10V
Quality and Safety Features
Hermetically sealed TO-268AA package for enhanced reliability
Designed and tested to meet industry safety standards
Compatibility
Compatible with a wide range of high-power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
High-voltage power conversion
Industrial and automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options may be available from IXYS or other manufacturers
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Wide temperature operating range
Reliable and safe performance in demanding applications
Compatibility with a variety of high-power electronic systems
IXFT12N50FIXYS / Littelfuse