Manufacturer Part Number
IXFR4N100Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Part of the HiPerFET, Q Class series
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±20V
On-state Resistance (Rds(on)): 3Ω @ 2A, 10V
Continuous Drain Current (Id): 3.5A @ 25°C
Input Capacitance (Ciss): 1050pF @ 25V
Power Dissipation (Tc): 80W
Product Advantages
High voltage capability
Low on-state resistance
High-performance MOSFET design
Key Technical Parameters
MOSFET technology
N-Channel FET type
Threshold Voltage (Vgs(th)): 5V @ 1.5mA
Gate Charge (Qg): 39nC @ 10V
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
ISOPLUS247 package
Compatibility
Suitable for a variety of high-voltage, high-power applications
Application Areas
Power supplies, motor drives, inverters, and other high-power electronic systems
Product Lifecycle
Currently available
No discontinuation or replacement plans known
Key Reasons to Choose This Product
Excellent high-voltage and high-power performance
Low on-state resistance for efficient power conversion
Reliable and safe operation in demanding applications
Compatibility with a wide range of high-power electronic systems