Manufacturer Part Number
IXFR44N50Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET with low on-resistance and high breakdown voltage, suitable for various power electronics applications.
Product Features and Performance
High breakdown voltage of 500V
Low on-resistance of 120mΩ @ 22A, 10V
High continuous drain current of 34A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 7000pF @ 25V
High power dissipation of 310W at Tc
Product Advantages
Excellent performance for high-voltage and high-current applications
Efficient power conversion with low conduction losses
Reliable operation across wide temperature range
Compact ISOPLUS247 package for easy mounting
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 120mΩ @ 22A, 10V
Continuous Drain Current (Id): 34A at 25°C
Input Capacitance (Ciss): 7000pF @ 25V
Power Dissipation (Ptot): 310W at Tc
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial power electronics
Motor drives
Switching power supplies
Inverters and converters
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades may be available from IXYS or other manufacturers
Key Reasons to Choose This Product
Excellent performance characteristics, including high breakdown voltage, low on-resistance, and high current capability
Efficient power conversion with low conduction losses
Reliable operation across wide temperature range
Compact and easy-to-mount ISOPLUS247 package
High-quality and RoHS-compliant design
IXFR44N60IXYS CorporationMOSFET N-CH 600V 38A ISOPLUS247