IXDH35N60BD1 - IXYS

Manufacturer Part Number

IXDH35N60BD1

Manufacturer

IXYS Corporation

Introduction

This is a discrete semiconductor product, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor.

Product Features and Performance

NPT (Non-Punch Through) IGBT technology

High voltage capability up to 600V

High current rating up to 60A

Low on-state voltage drop of 2.7V @ 15V, 35A

Fast reverse recovery time of 40ns

Gate charge of 120nC

Pulsed collector current up to 70A

Power rating up to 250W

Product Advantages

Efficient power conversion and control

Reliable high-power operation

Compact and robust design

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Max): 60A

Collector Current (Pulsed): 70A

On-state Voltage (Max): 2.7V @ 15V, 35A

Reverse Recovery Time: 40ns

Gate Charge: 120nC

Power Rating: 250W

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Housed in a TO-247AD package for reliable operation

Compatibility

This IGBT is compatible with various power electronics applications that require high voltage and current handling capabilities.

Application Areas

Motor drives

Power supplies

Inverters

Welding equipment

Induction heating

Other high-power switching applications

Product Lifecycle

This IGBT is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or through authorized distributors.

Several Key Reasons to Choose This Product

High voltage and current handling capabilities for efficient power conversion and control.

Fast switching performance with low on-state voltage and reverse recovery time.

Compact and robust design in a reliable TO-247AD package.

Wide operating temperature range of -55°C to 150°C for diverse applications.

RoHS3 compliance for environmentally-friendly use.