IXDH35N60B - IXYS

Manufacturer Part Number

IXDH35N60B

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Single Transistor IGBT

Product Features and Performance

RoHS3 Compliant

TO-247AD Package

Through Hole Mounting

Operating Temperature: -55°C to 150°C

Power Rating: 250W

IGBT Type: NPT

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Max): 60A

Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 35A

Gate Charge: 120nC

Collector Pulsed Current: 70A

Switching Energy: 1.6mJ (on), 800J (off)

Product Advantages

High power handling capability

Low conduction and switching losses

Reliable and robust performance

Key Technical Parameters

Voltage Rating: 600V

Current Rating: 60A

Saturation Voltage: 2.7V

Switching Energy: 1.6mJ (on), 800J (off)

Quality and Safety Features

RoHS3 Compliant

Designed for reliable and safe operation

Compatibility

Suitable for a wide range of power electronic applications

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Other high-power electronic systems

Product Lifecycle

Current production model, no discontinuation or replacement planned

Key Reasons to Choose This Product

High power handling capacity

Efficient performance with low losses

Reliable and robust design

Suitable for a variety of power electronic applications