IXDF602SIA - IXYS Integrated Circuits Division

Manufacturer Part Number

IXDF602SIA

Manufacturer

IXYS Corporation

Introduction

High-speed, high-current gate driver IC for IGBT and MOSFET power switching applications.

Product Features and Performance

Independent gate driver channels

High peak source/sink current capability (2A)

Fast rise/fall times (7.5ns/6.5ns)

Wide supply voltage range (4.5V to 35V)

Compatible with 0.8V/3V logic levels

Inverting and non-inverting input configurations

Supports IGBT, N-channel and P-channel MOSFET power devices

Extended temperature range (-55°C to 150°C)

Product Advantages

Compact 8-pin SOIC package

High efficiency and reliability

Suitable for a wide range of power conversion applications

Key Technical Parameters

Supply Voltage: 4.5V to 35V

Logic Voltage (VIL/VIH): 0.8V, 3V

Peak Output Current (Source/Sink): 2A, 2A

Rise/Fall Time (Typical): 7.5ns, 6.5ns

Quality and Safety Features

RoHS3 compliant

Designed for high-reliability industrial applications

Compatibility

Compatible with various IGBT, N-channel and P-channel MOSFET power devices.

Application Areas

Power converters

Motor drives

Industrial automation

Renewable energy systems

Uninterruptible power supplies (UPS)

Product Lifecycle

The IXDF602SIA is an active product and not nearing discontinuation. Replacement or upgrade options are available from IXYS Corporation.

Key Reasons to Choose This Product

High-performance gate driver with fast switching and high current capability

Wide supply voltage range and compatibility with various power devices

Extended temperature range for industrial and harsh environment applications

Compact 8-pin SOIC package for space-constrained designs

Proven reliability and RoHS3 compliance for industrial applications