Manufacturer Part Number
IXDF602SIA
Manufacturer
IXYS Corporation
Introduction
High-speed, high-current gate driver IC for IGBT and MOSFET power switching applications.
Product Features and Performance
Independent gate driver channels
High peak source/sink current capability (2A)
Fast rise/fall times (7.5ns/6.5ns)
Wide supply voltage range (4.5V to 35V)
Compatible with 0.8V/3V logic levels
Inverting and non-inverting input configurations
Supports IGBT, N-channel and P-channel MOSFET power devices
Extended temperature range (-55°C to 150°C)
Product Advantages
Compact 8-pin SOIC package
High efficiency and reliability
Suitable for a wide range of power conversion applications
Key Technical Parameters
Supply Voltage: 4.5V to 35V
Logic Voltage (VIL/VIH): 0.8V, 3V
Peak Output Current (Source/Sink): 2A, 2A
Rise/Fall Time (Typical): 7.5ns, 6.5ns
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability industrial applications
Compatibility
Compatible with various IGBT, N-channel and P-channel MOSFET power devices.
Application Areas
Power converters
Motor drives
Industrial automation
Renewable energy systems
Uninterruptible power supplies (UPS)
Product Lifecycle
The IXDF602SIA is an active product and not nearing discontinuation. Replacement or upgrade options are available from IXYS Corporation.
Key Reasons to Choose This Product
High-performance gate driver with fast switching and high current capability
Wide supply voltage range and compatibility with various power devices
Extended temperature range for industrial and harsh environment applications
Compact 8-pin SOIC package for space-constrained designs
Proven reliability and RoHS3 compliance for industrial applications