IXDH30N120D1 - IXYS

Manufacturer Part Number

IXDH30N120D1

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel insulated gate bipolar transistor (IGBT)

Suitable for high-power switching applications

Product Features and Performance

Low conduction and switching losses

Fast switching speed

High short-circuit withstand capability

High power density

Optimized for high-frequency operation

Product Advantages

Excellent efficiency

Compact design

Reliable performance

Key Technical Parameters

IGBT Type: NPT

Collector-Emitter Breakdown Voltage (max): 1200 V

Collector Current (max): 60 A

Collector-Emitter Saturation Voltage (max): 2.9 V

Reverse Recovery Time: 40 ns

Gate Charge: 120 nC

Switching Energy: 4.6 mJ (on), 3.4 mJ (off)

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and safety

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

High-power switching applications

Inverters

Converters

Motor drives

Power supplies

Product Lifecycle

Currently available

No discontinuation or replacement plans identified

Key Reasons to Choose This Product

High efficiency and low losses

Fast switching speed for high-frequency operation

Compact and reliable design

Suitable for a wide range of high-power applications

Proven performance and quality