IXDH20N120D1 - IXYS

Manufacturer Part Number

IXDH20N120D1

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Transistor IGBT Single

Product Features and Performance

Power Rating: 200 W

IGBT Type: NPT

Voltage Rating: 1200 V

Current Rating: 38 A

Vce(on) (Max): 3 V @ 15 V, 20 A

Reverse Recovery Time: 40 ns

Gate Charge: 70 nC

Pulsed Collector Current: 50 A

Switching Energy: 3.1 mJ (on), 2.4 mJ (off)

Product Advantages

Wide operating temperature range: -55°C to 150°C

RoHS3 compliant

Through-hole mounting

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 38 A

Reverse Recovery Time (trr): 40 ns

Gate Charge: 70 nC

Current Collector Pulsed (Icm): 50 A

Switching Energy: 3.1 mJ (on), 2.4 mJ (off)

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range: -55°C to 150°C

Compatibility

Standard Input Type

Application Areas

Suitable for various power conversion and control applications

Product Lifecycle

Currently available

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

Wide operating temperature range

RoHS3 compliance

Through-hole mounting for easy integration

Reliable performance with technical specifications suitable for various power applications