MB85R4M2TFN-G-JAE2 - Kaga FEI America, Inc.

Manufacturer Part Number

MB85R4M2TFN-G-JAE2

Manufacturer

Furuno (Kaga Electronics USA)

Introduction

Furuno's MB85R4M2TFN-G-JAE2 is a high-performance, non-volatile FRAM (Ferroelectric RAM) memory integrated circuit (IC) suitable for a wide range of applications.

Product Features and Performance

4Mbit (256K x 16) FRAM memory capacity

150ns access time and 150ns write cycle time

8V to 3.6V operating voltage range

Wide operating temperature range of -40°C to 85°C

Parallel memory interface

ROHS3 compliant

Product Advantages

Non-volatile memory with virtually unlimited write cycles

Fast read and write speeds

Low power consumption

Wide temperature range for harsh environments

Reliable data retention without battery backup

Key Technical Parameters

Memory Size: 4Mbit

Memory Organization: 256K x 16

Memory Interface: Parallel

Access Time: 150ns

Write Cycle Time: 150ns

Operating Voltage: 1.8V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

ROHS3 compliant

Rigorous quality control and testing

Compatibility

Compatible with a wide range of electronic devices and systems requiring non-volatile memory

Application Areas

Industrial automation and control systems

Medical equipment

Automotive electronics

Portable devices

IoT and embedded systems

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgrade options are available from Furuno.

Key Reasons to Choose This Product

High-performance, non-volatile FRAM memory

Fast read and write speeds

Low power consumption

Wide operating temperature range

Reliable data retention without battery backup

Robust quality and safety features

Compatibility with a wide range of applications