Manufacturer Part Number
MB85R4001ANC-GE1
Manufacturer
Furuno (Kaga Electronics USA)
Introduction
High-performance FRAM (Ferroelectric Random Access Memory) integrated circuit with 4Mbit of non-volatile memory.
Product Features and Performance
4Mbit of non-volatile FRAM memory
Parallel memory interface
150ns access time
150ns write cycle time
Wide operating temperature range of -40°C to 85°C
Low power consumption
Product Advantages
Non-volatile memory that retains data without power
High-speed performance with fast read and write cycles
Wide temperature range for use in diverse applications
Low power usage for energy efficiency
Key Technical Parameters
Memory Size: 4Mbit
Memory Technology: FRAM (Ferroelectric RAM)
Memory Interface: Parallel
Access Time: 150ns
Write Cycle Time: 150ns
Operating Voltage: 3V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
48-TSOP package for surface mount assembly
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Ideal for use in industrial, automotive, and consumer electronics applications requiring non-volatile memory with fast performance and low power consumption
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High-performance FRAM technology providing fast, non-volatile memory
Wide operating temperature range for use in diverse environments
Low power consumption for energy-efficient applications
RoHS3 compliance for environmental safety
Availability and support from the manufacturer, Furuno (Kaga Electronics USA)
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