Manufacturer Part Number
MB85RC04VPNF-G-JNERE1
Manufacturer
Furuno (Kaga Electronics USA)
Introduction
Highly integrated, low-power, non-volatile ferroelectric RAM (FRAM) memory chip
Product Features and Performance
Operates at 3V to 5.5V voltage range
Fast 550ns access time
1MHz clock frequency
4Kbit (512 x 8) memory size
FRAM technology provides non-volatile, high endurance memory
Low power consumption
Product Advantages
Non-volatile memory retains data without power
High write endurance up to 10^12 cycles
Fast read/write access times
Low power operation
Key Technical Parameters
Memory Type: FRAM (Ferroelectric RAM)
Memory Size: 4Kbit (512 x 8)
Access Time: 550ns
Voltage Range: 3V to 5.5V
Clock Frequency: 1MHz
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
8-SOP package
Compatibility
Surface mount 8-SOIC package
Compatible with standard memory interfaces
Application Areas
Embedded systems
Industrial control
Metering
Sensor networks
Consumer electronics
Product Lifecycle
Active product, no end-of-life announcement
Several Key Reasons to Choose This Product
Non-volatile FRAM memory with high endurance and fast access
Low power operation
Wide operating temperature range
Small 8-SOP package size
Compatibility with standard memory interfaces
MB85RC16PNF-G-JNERE1 FUJITSUFujitsu Electronics America, Inc.
MB85R4M2TFN-G-JAE2Kaga FEI America, Inc.IC FRAM 4MBIT 44TSOP
MB85R4001ANC-GE1Kaga FEI America, Inc.IC FRAM 4MBIT PARALLEL 48TSOP
MB85R4M2TFN-G-ASE1Kaga FEI America, Inc.IC FRAM 4MBIT PARALLEL 44TSOP