MB85R4M2TFN-G-ASE1 - Kaga FEI America, Inc.

Manufacturer Part Number

MB85R4M2TFN-G-ASE1

Manufacturer

Furuno (Kaga Electronics USA)

Introduction

Integrated Circuit (IC) Memory Chip

Product Features and Performance

FRAM (Ferroelectric RAM) technology

Non-volatile memory

Parallel memory interface

4Mbit memory size

256K x 16 memory organization

150ns access time

150ns write cycle time (word, page)

Operating voltage range: 1.8V ~ 3.6V

Operating temperature range: -40°C ~ 85°C

Product Advantages

Non-volatile memory with fast write speeds

Wide voltage and temperature operating ranges

Parallel memory interface for easy integration

Key Technical Parameters

Memory Type: FRAM (Ferroelectric RAM)

Memory Size: 4Mbit

Memory Organization: 256K x 16

Access Time: 150ns

Write Cycle Time: 150ns

Operating Voltage: 1.8V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

RoHS3 compliant

44-TSOP (0.400", 10.16mm width) package

Compatibility

Surface mount package

Compatible with a wide range of electronic systems and devices

Application Areas

Suitable for various embedded systems and applications requiring non-volatile memory

Product Lifecycle

Current product, no information on discontinuation or replacement

Key Reasons to Choose This Product

Fast non-volatile memory with high endurance

Wide operating voltage and temperature ranges

Parallel memory interface for easy integration

Compact surface mount package

RoHS3 compliance for environmental safety