Manufacturer Part Number
MB85R256FPFCN-G-BNDE1
Manufacturer
Furuno (Kaga Electronics USA)
Introduction
High-performance FRAM (Ferroelectric RAM) memory integrated circuit
Product Features and Performance
Non-volatile memory with high-speed read/write access
Low power consumption
Wide operating temperature range (-40°C to 85°C)
High endurance up to 10^12 write cycles
Fast read/write access time of 150 ns
Parallel memory interface
256Kbit memory capacity organized as 32K x 8
Product Advantages
Long data retention without power
Rapid read/write operation
Wide temperature range for diverse applications
High durability and reliability
Key Technical Parameters
Operating voltage: 2.7V to 3.6V
Memory technology: FRAM (Ferroelectric RAM)
Memory size: 256Kbit
Memory organization: 32K x 8
Access time: 150 ns
Write cycle time: 150 ns
Quality and Safety Features
RoHS3 compliant
28-TSSOP package for surface mount
Compatibility
Compatible with a wide range of electronic devices and systems requiring non-volatile memory
Application Areas
Industrial automation and control systems
Portable electronics
Embedded systems
Sensor networks
IoT applications
Product Lifecycle
Currently in active production, with no plans for discontinuation. Replacement or upgrade models may be available in the future.
Key Reasons to Choose This Product
High-speed, non-volatile FRAM memory
Low power consumption
Wide operating temperature range
Exceptional durability and reliability
Ease of integration with diverse electronic systems
RoHS3 compliance for environmental friendliness
MB85R1002PFFujitsu Electronics America, Inc.
MB85R4M2TFN-G-JAE2Kaga FEI America, Inc.IC FRAM 4MBIT 44TSOP
MB85R256FPNF-G-JNERE2Kaga FEI America, Inc.IC FRAM 256KBIT PARALLEL 28SOP