Manufacturer Part Number
AFT26HW050SR3
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
High-performance RF LDMOS transistor for 2.5GHz-2.7GHz wireless infrastructure applications.
Product Features and Performance
High-power output (9W)
High gain (14.2dB)
Broad frequency range (2.496GHz 2.69GHz)
Capable of handling high current (10A) and voltage (65V)
Robust and reliable LDMOS technology
Product Advantages
Optimized for 2.5GHz-2.7GHz wireless infrastructure applications
Efficient power delivery with high gain and output power
Durable design handles high current and voltage
Reliable LDMOS technology for long-lasting performance
Key Technical Parameters
Power Output: 9W
Current (Test): 100mA
Voltage (Rated): 65V
Gain: 14.2dB
Voltage (Test): 28V
Current Rating: 10A
Frequency: 2.496GHz 2.69GHz
Quality and Safety Features
RoHS3 compliant
Robust Ni-780-4S4 package for chassis mount
Compatibility
Compatible with 2.5GHz-2.7GHz wireless infrastructure applications
Application Areas
Wireless infrastructure
Base stations
RF power amplifiers
Product Lifecycle
Current production model
No known plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Optimized for 2.5GHz-2.7GHz wireless infrastructure applications
Efficient power delivery with high gain and output power
Durable design handles high current and voltage
Reliable LDMOS technology for long-lasting performance
RoHS3 compliant for environmental safety
Robust package for chassis mount applications