Manufacturer Part Number
AFT26H200W03SR6
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS transistor designed for RF power amplifier applications
Product Features and Performance
Capable of delivering up to 45W of output power
Operates at a frequency of 2.5GHz
Provides a gain of 14.1dB
Product Advantages
Efficient and reliable performance
Suitable for a wide range of RF power amplifier applications
Key Technical Parameters
Power Output: 45W
Current (Test): 500mA
Voltage (Rated): 65V
Gain: 14.1dB
Voltage (Test): 28V
Frequency: 2.5GHz
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 compliant
Packaged in NI-1230-4S format
Compatibility
Suitable for use in various RF power amplifier designs
Application Areas
Suitable for use in RF power amplifier applications, such as in wireless communication systems
Product Lifecycle
This product is currently available and widely used
Replacements or upgrades may be available in the future as technology evolves
Several Key Reasons to Choose This Product
Delivers high-performance and efficient RF power output
Suitable for a wide range of RF power amplifier applications
Reliable and RoHS3 compliant design
Widely used and supported by the manufacturer
