AFT26H200W03SR6 - NXP USA Inc.

Manufacturer Part Number

AFT26H200W03SR6

Manufacturer

NXP Semiconductors

Introduction

High-performance LDMOS transistor designed for RF power amplifier applications

Product Features and Performance

Capable of delivering up to 45W of output power

Operates at a frequency of 2.5GHz

Provides a gain of 14.1dB

Product Advantages

Efficient and reliable performance

Suitable for a wide range of RF power amplifier applications

Key Technical Parameters

Power Output: 45W

Current (Test): 500mA

Voltage (Rated): 65V

Gain: 14.1dB

Voltage (Test): 28V

Frequency: 2.5GHz

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 compliant

Packaged in NI-1230-4S format

Compatibility

Suitable for use in various RF power amplifier designs

Application Areas

Suitable for use in RF power amplifier applications, such as in wireless communication systems

Product Lifecycle

This product is currently available and widely used

Replacements or upgrades may be available in the future as technology evolves

Several Key Reasons to Choose This Product

Delivers high-performance and efficient RF power output

Suitable for a wide range of RF power amplifier applications

Reliable and RoHS3 compliant design

Widely used and supported by the manufacturer