Manufacturer Part Number
AFT26H160-4S4R3
Manufacturer
NXP Semiconductors
Introduction
The AFT26H160-4S4R3 is a high-performance RF MOSFET transistor from NXP Semiconductors, designed for use in a variety of RF and microwave applications.
Product Features and Performance
32W output power
500mA test current
65V rated voltage
9dB gain
28V test voltage
5GHz operating frequency
LDMOS technology
Product Advantages
High power handling capability
Excellent gain and efficiency
Reliable and robust design
Suitable for a wide range of applications
Key Technical Parameters
Power Output: 32W
Current (Test): 500mA
Voltage (Rated): 65V
Gain: 14.9dB
Voltage (Test): 28V
Frequency: 2.5GHz
Technology: LDMOS
Quality and Safety Features
RoHS3 compliant
NI-880X-4L4S-8 package
Chassis mount design
Compatibility
This RF MOSFET is compatible with a variety of RF and microwave applications.
Application Areas
RF power amplifiers
Wireless communications
Radar systems
Broadcast equipment
Industrial and medical applications
Product Lifecycle
The AFT26H160-4S4R3 is an actively supported product and is not near discontinuation. Replacement or upgraded models may be available in the future as technology advances.
Key Reasons to Choose This Product
High power output and excellent performance characteristics
Reliable and robust design for demanding applications
Compatibility with a wide range of RF and microwave systems
RoHS3 compliance for environmental responsibility
Availability in a convenient chassis mount package
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