Manufacturer Part Number
AFT27S006NT1
Manufacturer
NXP Semiconductors
Introduction
High-performance RF MOSFET transistor suitable for amplifier applications in the 2GHz frequency range.
Product Features and Performance
High power output up to 28.8dBm
High gain of 22dB
Operates at 2.17GHz frequency
High voltage rating of 65V
Test current of 70mA
Test voltage of 28V
Product Advantages
Excellent RF performance for 2GHz applications
High power and efficiency
Robust design for reliable operation
Key Technical Parameters
LDMOS technology
Surface mount package (PLD-1.5W)
RoHS3 compliant
Quality and Safety Features
Fully RoHS3 compliant
Reliable performance ensured through rigorous testing
Compatibility
Suitable for use in amplifier circuits in the 2GHz frequency range
Application Areas
Wireless communications
Radar systems
Industrial RF applications
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Exceptional RF performance at 2GHz
High power output and efficiency
Robust and reliable design
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of 2GHz amplifier applications
AFT26HW050SR3Freescale SemiconductorRF N CHANNEL, MOSFET