Manufacturer Part Number
AFT26HW050SR3
Manufacturer
NXP Semiconductors
Introduction
This is a high-performance RF transistor from NXP Semiconductors, designed for use in various wireless communication applications.
Product Features and Performance
Dual configuration for flexible design
LDMOS technology for high power and efficiency
Output power of 9W
Gain of 14.2dB
Operates at a frequency of 2.69GHz
Rated voltage of 65V
Test voltage of 28V
Test current of 100mA
Product Advantages
Efficient power handling capability
Reliable and robust design
Suitable for a wide range of RF applications
Key Technical Parameters
Manufacturer Part Number: AFT26HW050SR3
Package / Case: NI-780-4S4
Supplier Device Package: NI-780-4S4
Package: Tape & Reel (TR)
Configuration: Dual
Technology: LDMOS
Power Output: 9W
Current Test: 100mA
Voltage Rated: 65V
Gain: 14.2dB
Voltage Test: 28V
Frequency: 2.69GHz
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
This RF transistor is compatible with a wide range of wireless communication systems and can be used in various applications.
Application Areas
Wireless communication systems
RF power amplifiers
Base stations
Repeaters
Wireless infrastructure equipment
Product Lifecycle
This product is currently in production and available for purchase. There are no plans for discontinuation or upgrades at this time.
Key Reasons to Choose This Product
High power output and efficiency
Reliable and robust LDMOS technology
Suitable for a wide range of RF applications
RoHS3 compliant for environmental safety
Readily available and supported by NXP Semiconductors
AFT26HW050SR3Freescale SemiconductorRF N CHANNEL, MOSFET