MRFE6S9125NR1 - NXP USA Inc.

Manufacturer Part Number

MRFE6S9125NR1

Manufacturer

NXP Semiconductors

Introduction

High-performance, LDMOS-based RF power transistor for wireless infrastructure applications

Product Features and Performance

27W output power

2dB gain

950mA test current

66V rated voltage

28V test voltage

880MHz operating frequency

Surface mount packaging

Product Advantages

High efficiency and linearity for improved system performance

Robust LDMOS technology for reliability

Optimized for cellular and wireless infrastructure applications

Key Technical Parameters

Power Output: 27W

Gain: 20.2dB

Voltage (Rated): 66V

Voltage (Test): 28V

Current (Test): 950mA

Frequency: 880MHz

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

TO-270 WB-4 package

Compatibility

Compatible with a wide range of wireless infrastructure applications

Application Areas

Cellular base stations

Wireless infrastructure equipment

Radio frequency (RF) power amplifiers

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

High-performance LDMOS technology for reliable and efficient operation

Optimized for wireless infrastructure applications

Surface mount packaging for ease of integration

RoHS3 compliance for environmental responsibility

Wide compatibility with various wireless systems