Manufacturer Part Number
MRFE6S9060NR1
Manufacturer
NXP Semiconductors
Introduction
High-performance RF power MOSFET transistor
Product Features and Performance
High-power output of 14W
Operates at 880MHz frequency
1dB gain
450mA test current
28V test voltage
66V rated voltage
LDMOS technology
Product Advantages
Compact surface mount package
Excellent power handling and efficiency
Suitable for high-frequency applications
Key Technical Parameters
Manufacturer Part Number: MRFE6S9060NR1
Package: TO-270-2
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Manufactured by NXP Semiconductors, a reputable semiconductor company
Meets RoHS3 environmental compliance standards
Compatibility
Suitable for use in a variety of high-frequency RF power applications
Application Areas
Wireless communication systems
Broadcast transmitters
Industrial, scientific, and medical (ISM) equipment
Product Lifecycle
This is an active product, not nearing discontinuation
Replacement or upgrade options may be available from NXP Semiconductors
Key Reasons to Choose This Product
High-power output and efficiency for demanding RF applications
Compact surface mount package for easy integration
Reliable performance and quality from a trusted semiconductor manufacturer
Compliance with RoHS3 environmental standards