MRFE6S9135HSR3 - Freescale Semiconductor

Manufacturer Part Number

MRFE6S9135HSR3

Manufacturer

Freescale Semiconductor, Inc. (NXP Semiconductors)

Introduction

High-power, high-efficiency RF MOSFET transistor for cellular and wireless infrastructure applications.

Product Features and Performance

High power output of 39W

Broad operating frequency range up to 1GHz

High gain of 21dB

Capable of handling up to 10A of current

Efficient LDMOS technology

Product Advantages

Robust and reliable performance

Compact surface mount package

Optimized for cellular and wireless infrastructure applications

Key Technical Parameters

Power Output: 39W

Test Current: 1A

Rated Voltage: 66V

Test Voltage: 28V

Current Rating: 10A

Frequency: 1GHz

Quality and Safety Features

RoHS3 compliant

Manufacturer's packaging: NI-880S

Compatibility

Surface mount package NI-880S

Application Areas

Cellular infrastructure

Wireless base stations

RF power amplifiers

Product Lifecycle

Current production part

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose

High power and efficiency for cellular/wireless applications

Proven LDMOS technology for reliable performance

Compact surface mount package for easy integration

RoHS compliance for environmental responsibility