Manufacturer Part Number
MRFE6S9135HSR3
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
High-power, high-efficiency RF MOSFET transistor for cellular and wireless infrastructure applications.
Product Features and Performance
High power output of 39W
Broad operating frequency range up to 1GHz
High gain of 21dB
Capable of handling up to 10A of current
Efficient LDMOS technology
Product Advantages
Robust and reliable performance
Compact surface mount package
Optimized for cellular and wireless infrastructure applications
Key Technical Parameters
Power Output: 39W
Test Current: 1A
Rated Voltage: 66V
Test Voltage: 28V
Current Rating: 10A
Frequency: 1GHz
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: NI-880S
Compatibility
Surface mount package NI-880S
Application Areas
Cellular infrastructure
Wireless base stations
RF power amplifiers
Product Lifecycle
Current production part
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose
High power and efficiency for cellular/wireless applications
Proven LDMOS technology for reliable performance
Compact surface mount package for easy integration
RoHS compliance for environmental responsibility