Manufacturer Part Number
MRFE6S9135HSR3
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS RF transistor for 940 MHz applications
Product Features and Performance
High-power handling capability of 39W at 940 MHz
Excellent gain of 21dB
Operational voltage of 66V
Test current of 1A
Test voltage of 28V
Product Advantages
Ideal for high-power RF applications such as cellular base stations and industrial/scientific/medical (ISM) equipment
Designed for efficient, high-performance operation
Reliable and robust construction
Key Technical Parameters
Power Output: 39W
Gain: 21dB
Voltage (Rated): 66V
Current (Test): 1A
Voltage (Test): 28V
Frequency: 940MHz
Quality and Safety Features
RoHS3 compliant
NI-880S package for surface mount technology
Compatibility
Suitable for a wide range of high-power RF applications
Application Areas
Cellular base stations
Industrial, scientific, and medical (ISM) equipment
Other high-power RF systems
Product Lifecycle
Current production part
Replacement and upgrade options available from NXP Semiconductors
Key Reasons to Choose This Product
High-power handling capability for efficient, high-performance operation
Excellent gain for improved system performance
Reliable and robust construction for long-term use
RoHS3 compliance for environmental responsibility
Surface mount packaging for easy integration into PCB designs
MRFE6S9135HR5NXP USA Inc.FET RF 66V 940MHZ NI-880