Manufacturer Part Number
MRFE6S9045NR1
Manufacturer
NXP Semiconductors
Introduction
High-power radio frequency (RF) MOSFET transistor
Product Features and Performance
High power rating of 10W
Operating frequency of 880MHz
High gain of 22.1dB
Rated voltage of 66V
Test voltage of 28V
Test current of 350mA
LDMOS technology
Product Advantages
Suitable for high-power RF applications
Reliable and efficient performance
Compact surface mount package
Key Technical Parameters
Manufacturer Part Number: MRFE6S9045NR1
Package: TO-270AA
Technology: LDMOS
Power Output: 10W
Current (Test): 350mA
Voltage (Rated): 66V
Voltage (Test): 28V
Gain: 22.1dB
Frequency: 880MHz
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for a variety of high-power RF applications
Application Areas
Wireless communication systems
Radio frequency power amplifiers
Industrial and commercial RF equipment
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power rating and efficiency for demanding RF applications
Reliable LDMOS technology for consistent performance
Compact surface mount package for easy integration
Compliance with RoHS3 standards for environmental sustainability
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