Manufacturer Part Number
MRF8P9040NR1
Manufacturer
NXP Semiconductors
Introduction
This product is a high-performance RF MOSFET transistor designed for use in various RF and wireless applications.
Product Features and Performance
Dual N-channel LDMOS RF power transistor
Operates at a frequency of 960 MHz
Provides a power output of 4W
Has a gain of 19.1 dB
Supports a rated voltage of 70V and a test voltage of 28V
Capable of handling a test current of 320 mA
Product Advantages
Excellent RF performance for a wide range of applications
Robust and reliable design for long-term use
Efficient power handling capabilities
Compact and easy to integrate into various circuit designs
Key Technical Parameters
Technology: LDMOS
Package: TO-272BB
Mounting Type: Chassis Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Manufactured using high-quality materials and processes to ensure reliability and durability
Complies with RoHS3 directives for environmental safety
Compatibility
Suitable for use in a variety of RF and wireless applications, such as amplifiers, transmitters, and transceivers
Application Areas
Telecommunications
Wireless communication systems
RF power amplifiers
Wireless infrastructure equipment
Product Lifecycle
This product is an active and currently available device from the manufacturer.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent RF performance and power handling capabilities
Robust and reliable design for long-term use
Efficient and compact package for easy integration
Compliance with environmental regulations (RoHS3)
Suitability for a wide range of RF and wireless applications
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