MRF8P26080HSR3 - NXP USA Inc.

Manufacturer Part Number

MRF8P26080HSR3

Manufacturer

NXP Semiconductors

Introduction

High-performance LDMOS RF power transistor designed for use in 2.6 GHz wireless infrastructure applications.

Product Features and Performance

High-power output of 14W

Operates at 2.62 GHz frequency

Gain of 15 dB

Supports 65V rated voltage and 300 mA test current

Surface mount packaging (NI-780S-4L)

Product Advantages

Excellent power efficiency and thermal management

Reliable performance in high-power wireless infrastructure

Compact surface mount package for easy integration

Key Technical Parameters

LDMOS transistor technology

Dual configuration

65V rated voltage

300 mA test current

62 GHz operating frequency

Quality and Safety Features

RoHS3 compliant

Manufacturer's packaging: NI-780S-4L

Compatibility

Suitable for 2.6 GHz wireless infrastructure applications.

Application Areas

Wireless base stations

Radio frequency (RF) power amplifiers

Wireless communication systems

Product Lifecycle

This product is currently in active production and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High-power output of 14W for efficient wireless infrastructure

Excellent RF performance at 2.62 GHz frequency

Reliable LDMOS transistor technology

Compact surface mount packaging for easy integration

RoHS3 compliance for environmental sustainability