Manufacturer Part Number
MRF8P26080HSR3
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS RF power transistor designed for use in 2.6 GHz wireless infrastructure applications.
Product Features and Performance
High-power output of 14W
Operates at 2.62 GHz frequency
Gain of 15 dB
Supports 65V rated voltage and 300 mA test current
Surface mount packaging (NI-780S-4L)
Product Advantages
Excellent power efficiency and thermal management
Reliable performance in high-power wireless infrastructure
Compact surface mount package for easy integration
Key Technical Parameters
LDMOS transistor technology
Dual configuration
65V rated voltage
300 mA test current
62 GHz operating frequency
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: NI-780S-4L
Compatibility
Suitable for 2.6 GHz wireless infrastructure applications.
Application Areas
Wireless base stations
Radio frequency (RF) power amplifiers
Wireless communication systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-power output of 14W for efficient wireless infrastructure
Excellent RF performance at 2.62 GHz frequency
Reliable LDMOS transistor technology
Compact surface mount packaging for easy integration
RoHS3 compliance for environmental sustainability