Manufacturer Part Number
MRF8P8300HSR6
Manufacturer
NXP Semiconductors
Introduction
This product is a high-performance, 96-watt, RF LDMOS transistor from NXP Semiconductors.
Product Features and Performance
96W output power
9dB gain
70V rated voltage
2A test current
820MHz operating frequency
Product Advantages
High power and efficiency
Robust LDMOS technology
Suitable for a variety of RF power amplifier applications
Key Technical Parameters
Power Output: 96W
Current (Test): 2A
Voltage (Rated): 70V
Gain: 20.9dB
Voltage (Test): 28V
Frequency: 820MHz
Quality and Safety Features
RoHS3 compliant
Reliable NI-1230S package
Compatibility
This transistor is compatible with various RF power amplifier designs and can be used in a wide range of applications.
Application Areas
RF power amplifiers
Wireless base stations
Radio transmitters
Industrial, scientific, and medical (ISM) equipment
Product Lifecycle
This product is an active and widely available part from NXP Semiconductors. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
High power output and efficiency
Robust LDMOS technology for reliable performance
Suitable for a variety of RF power amplifier applications
RoHS3 compliance for environmental sustainability
Availability and ongoing support from NXP Semiconductors
