Manufacturer Part Number
MRF8P9300HSR6
Manufacturer
NXP Semiconductors
Introduction
High-performance RF MOSFET transistor designed for use in high-power amplifier applications.
Product Features and Performance
100W output power
4dB gain
4A test current
70V rated voltage
960MHz operating frequency
LDMOS technology for high power and efficiency
Product Advantages
Robust and reliable performance
Suitable for high-power RF amplifier designs
Efficient power conversion
Key Technical Parameters
Power output: 100W
Test current: 2.4A
Rated voltage: 70V
Gain: 19.4dB
Test voltage: 28V
Frequency: 960MHz
LDMOS technology
Quality and Safety Features
RoHS3 compliant
Packaged in NI-1230S chassis mount
Compatibility
Suitable for use in various high-power RF amplifier applications
Application Areas
High-power RF amplifiers
Broadcast transmitters
Wireless communications equipment
Product Lifecycle
Current product in production
Replacement options available if needed
Key Reasons to Choose This Product
High-power and efficient performance
Robust and reliable design
Suitable for a wide range of RF amplifier applications
Backed by the expertise of NXP Semiconductors