Manufacturer Part Number
MRF8S18120HR3
Manufacturer
NXP Semiconductors
Introduction
High-performance RF MOSFET transistor designed for use in power amplifier applications up to 2 GHz.
Product Features and Performance
72W output power
2dB gain
800mA current rating
65V rated voltage
Operates at 1.81GHz frequency
LDMOS technology
Product Advantages
Excellent power efficiency
High reliability
Robust design
Suitable for demanding RF power applications
Key Technical Parameters
Manufacturer Part Number: MRF8S18120HR3
Package: SOT-957A
RoHS Compliance: RoHS3 Compliant
Packaging: Tape & Reel (TR)
Quality and Safety Features
Meets RoHS3 compliance requirements
Robust and reliable design for demanding applications
Compatibility
Compatible with a wide range of RF power amplifier circuits and systems
Application Areas
Cellular base stations
Wireless infrastructure
Broadcast transmitters
Industrial RF power applications
Product Lifecycle
Currently in active production
No plans for discontinuation, replacements or upgrades announced
Several Key Reasons to Choose This Product
High output power and efficiency for improved system performance
Reliable and robust design for demanding RF applications
Proven LDMOS technology for consistent and stable operation
Meets RoHS3 compliance requirements for use in regulated markets
Available in convenient Tape & Reel packaging for ease of manufacturing
