BFU530AR - NXP USA Inc.

Manufacturer Part Number

BFU530AR

Manufacturer

NXP Semiconductors

Introduction

High-performance RF bipolar transistor designed for use in automotive and industrial applications

Product Features and Performance

High transition frequency of 11GHz

Low noise figure of 0.6dB at 900MHz

High current gain (hFE) of 60 at 10mA, 8V

Wide operating temperature range of -40°C to 150°C

Able to handle up to 450mW of power

Product Advantages

Excellent RF performance for high-frequency applications

Robust design suitable for harsh automotive and industrial environments

Compact SOT-23 package for space-efficient board layouts

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 12V

Collector Current (IC): 40mA

Power Dissipation: 450mW

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for use in a wide range of RF circuits and systems

Application Areas

Automotive electronics (e.g., radios, telemetry)

Industrial equipment (e.g., wireless communication modules)

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available from NXP

Key Reasons to Choose this Product

High-performance RF characteristics for demanding applications

Robust design for use in harsh environments

Space-efficient packaging for compact circuit designs

Automotive and industrial grade qualification for reliability