Manufacturer Part Number
BFU590GX
Manufacturer
NXP Semiconductors
Introduction
High-frequency bipolar transistor for RF power amplifier applications
Product Features and Performance
High-frequency operation up to 8.5 GHz
Power handling capability up to 2W
High current gain of 60 at 80mA, 8V
Low noise figure of 8dB
Product Advantages
Excellent high-frequency performance
Robust and reliable design
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 12V
Collector Current (max): 200mA
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable SC-73 package
Compatibility
Compatible with TO-261-4, TO-261AA packages
Application Areas
RF power amplifiers
Wireless communication systems
Instrumentation and test equipment
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent high-frequency performance for RF power amplifier applications
Robust and reliable design for demanding operating conditions
Compact surface mount package for space-constrained designs
Compliance with RoHS3 regulations for environmentally-friendly use
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