BFU550WX - NXP Semiconductors

Manufacturer Part Number

BFU550WX

Manufacturer

NXP Semiconductors

Introduction

High-frequency NPN bipolar transistor designed for radio frequency (RF) applications

Product Features and Performance

Capable of operation up to 11GHz

Provides 18dB of gain at 1.8GHz

Low noise figure of 1.3dB at 1.8GHz

Handles up to 50mA of collector current

Supports a maximum collector-emitter voltage of 12V

Operates within a wide temperature range of -40°C to 150°C

Product Advantages

Excellent high-frequency performance

Low noise characteristics

Suitable for a variety of RF applications

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE): Minimum of 60 @ 15mA, 8V

Frequency Transition: 11GHz

Gain: 18dB

Noise Figure: 1.3dB @ 1.8GHz

Power Dissipation: Maximum of 450mW

Quality and Safety Features

RoHS non-compliant

Packaged in SC-70 surface mount format

Compatibility

Compatible with SC-70, SOT-323 package types

Application Areas

Suitable for a wide range of RF applications, including amplifiers, oscillators, and mixers

Product Lifecycle

Currently available, no known discontinuation plans

Several Key Reasons to Choose This Product

Excellent high-frequency performance with a transition frequency of 11GHz

Low noise figure of 1.3dB at 1.8GHz, making it suitable for noise-sensitive applications

Versatile with a wide operating temperature range of -40°C to 150°C

Compact surface mount packaging for efficient board integration