BFU520WX - NXP USA Inc.

Manufacturer Part Number

BFU520WX

Manufacturer

NXP Semiconductors

Introduction

High-frequency NPN bipolar transistor for automotive and industrial radio frequency (RF) applications

Product Features and Performance

Optimized for RF performance up to 10GHz

Low noise figure of 0.6dB at 900MHz

High gain of 18.5dB

High transition frequency of 10GHz

Collector-emitter breakdown voltage of 12V

Collector current up to 30mA

Power dissipation up to 450mW

Operating temperature range of -40°C to 150°C

Product Advantages

Excellent high-frequency performance

Low noise characteristics

Robust design for automotive and industrial applications

RoHS3 compliant

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE): Min. 60 @ 5mA, 8V

Transition Frequency: 10GHz

Noise Figure: 0.6dB @ 900MHz

Collector-Emitter Breakdown Voltage: 12V

Collector Current: Max. 30mA

Power Dissipation: Max. 450mW

Operating Temperature: -40°C to 150°C

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS3 compliant

Compatibility

Suitable for use in various RF applications, including:

Automotive radios and transceivers

Industrial radio communication equipment

Wireless infrastructure and base stations

Application Areas

Automotive electronics

Industrial RF equipment

Wireless communication systems

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent high-frequency performance up to 10GHz

Low noise figure of 0.6dB at 900MHz

High gain of 18.5dB for efficient RF amplification

Robust design for automotive and industrial applications

AEC-Q101 qualified and RoHS3 compliant for quality and safety

Suitable for a wide range of RF applications