BFU520WF - NXP USA Inc.

Manufacturer Part Number

BFU520WF

Manufacturer

NXP Semiconductors

Introduction

The BFU520WF is a high-performance, surface-mount NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.

Product Features and Performance

High transition frequency of 10 GHz

Low noise figure of 1 dB at 1.8 GHz

High gain of 13 dB

Operating temperature range of -40°C to 150°C

Maximum collector current of 30 mA

Maximum collector-emitter voltage of 12 V

Maximum power dissipation of 450 mW

Product Advantages

Excellent high-frequency performance for RF applications

Small surface-mount package (SC-70) for compact design

RoHS compliance for environmental sustainability

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE): Minimum of 60 @ 5 mA, 8 V

Transition Frequency (fT): 10 GHz

Gain: 13 dB

Noise Figure: 1 dB @ 1.8 GHz

Quality and Safety Features

RoHS3 compliant for restricted substances

Reliable performance in the -40°C to 150°C temperature range

Compatibility

Surface-mount SC-70 package for easy integration into compact designs

Application Areas

RF amplifiers

Mixers

Oscillators

Switches

Broadband communication systems

Product Lifecycle

The BFU520WF is an active product and is not nearing discontinuation.

Replacements and upgrades may be available from NXP Semiconductors.

Key Reasons to Choose This Product

Excellent high-frequency performance with a transition frequency of 10 GHz

Low noise figure of 1 dB at 1.8 GHz for improved signal-to-noise ratio

High gain of 13 dB for efficient amplification

Compact surface-mount package for space-constrained designs

RoHS compliance for environmental responsibility

Reliable operation in the -40°C to 150°C temperature range