Manufacturer Part Number
MJD127TF
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) - Single
Product Features and Performance
TO-252-3 (DPAK) package
Operating temperature up to 150°C
Power rating up to 1.75W
Collector-Emitter Breakdown Voltage up to 100V
Collector Current up to 8A
Collector Cutoff Current up to 10A
VCE Saturation Voltage up to 4V @ 80mA, 8A
High DC Current Gain of 1000 min. @ 4A, 4V
Product Advantages
Compact surface mount package
High power and current handling capability
Good thermal performance
High voltage and current ratings
Key Technical Parameters
Package: TO-252-3 (DPAK)
Transistor Type: PNP Darlington
Power Rating: 1.75W
Collector-Emitter Breakdown Voltage: 100V
Collector Current: 8A
Collector Cutoff Current: 10A
VCE Saturation Voltage: 4V @ 80mA, 8A
DC Current Gain: 1000 min. @ 4A, 4V
Quality and Safety Features
Designed for reliable and safe operation
Compatibility
Surface mount applications
Application Areas
Power amplifiers
Motor drivers
Switching regulators
Relay and solenoid drivers
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High power and current handling capability
Compact surface mount package
Excellent thermal performance
Wide voltage and current ratings
High DC current gain