Manufacturer Part Number
MJD127T4
Manufacturer
onsemi
Introduction
The MJD127T4 is a high-power, high-gain PNP Darlington transistor from onsemi, designed for a variety of power switching and amplification applications.
Product Features and Performance
High collector current capability of up to 8A
High DC current gain of 1000 minimum at 4A, 4V
High frequency transition of 4MHz
Power dissipation of up to 1.75W
Product Advantages
Excellent switching and amplification performance
Reliable and robust design for demanding applications
Surface mount DPAK package for efficient thermal management
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 100V
Collector Cutoff Current: 10A
Collector-Emitter Saturation Voltage: 4V @ 80mA, 8A
Quality and Safety Features
RoHS non-compliant
Tape and reel packaging for automated assembly
Compatibility
The MJD127T4 is compatible with a wide range of electronic circuits and systems that require a high-power, high-gain PNP Darlington transistor.
Application Areas
Power amplifiers
Motor control
Power supplies
Switching regulators
Industrial electronics
Product Lifecycle
The MJD127T4 is an active product, and onsemi continues to manufacture and support it. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent power handling and switching capabilities
High current gain for efficient amplification
Reliable and robust design for demanding applications
Surface mount DPAK package for efficient thermal management
Compatibility with a wide range of electronic circuits and systems