MJD122T4G - onsemi

Manufacturer Part Number

MJD122T4G

Manufacturer

onsemi

Introduction

The MJD122T4G is a high-voltage, high-current NPN Darlington transistor suitable for a wide range of power switching applications.

Product Features and Performance

Capable of handling up to 100V collector-emitter voltage

Supports up to 8A collector current

Offers a high DC current gain of at least 1000 at 4A collector current and 4V collector-emitter voltage

Transition frequency of 4MHz

Operating temperature range of -65°C to 150°C

Product Advantages

Robust Darlington configuration for high current handling

High voltage and power capability

High DC current gain for efficient power switching

Wide operating temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 100V

Collector Current (max): 8A

DC Current Gain (min): 1000 @ 4A, 4V

Transition Frequency: 4MHz

Power Dissipation (max): 1.75W

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant

DPAK surface mount package

Compatibility

Compatible with a wide range of power electronic circuits and systems

Application Areas

Power switching

Motor control

Industrial automation

Consumer electronics

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgraded options may become available in the future as technology advances.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Robust Darlington configuration for efficient power switching

High DC current gain for improved performance

Wide operating temperature range for versatile applications

Compact surface mount DPAK package for space-constrained designs