MJD122T4 - onsemi

Manufacturer Part Number

MJD122T4

Manufacturer

onsemi

Introduction

NPN Darlington Transistor

High-voltage, high-current bipolar transistor

Product Features and Performance

Power rating of 20W

Collector-emitter breakdown voltage of 100V

Collector current up to 8A

Collector cutoff current up to 10A

Low saturation voltage of 2V at 15mA, 4A

High DC current gain of 1000 at 4A, 4V

Transition frequency of 4MHz

Product Advantages

Suitable for high-power switching and amplifier applications

Excellent current handling capability

Low saturation voltage for efficient operation

High gain for simplified circuit design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 8A

Current Collector Cutoff (Max): 10A

Vce Saturation (Max) @ Ib, Ic: 2V @ 15mA, 4A

DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V

Frequency Transition: 4MHz

Quality and Safety Features

RoHS non-compliant

DPAK package for surface mount assembly

Compatibility

Compatible with various high-power electronic circuit designs

Application Areas

High-power switching and amplifier circuits

Motor control

Power supplies

Industrial automation

Automotive electronics

Product Lifecycle

This product is an active and available component from the manufacturer.

Several Key Reasons to Choose This Product

High power handling capability up to 20W

Excellent current handling up to 8A and 10A cutoff

Low saturation voltage for efficient operation

High DC current gain of 1000 for simplified circuit design

Suitable for a wide range of high-power electronic applications