MJD127T4G - onsemi

Manufacturer Part Number

MJD127T4G

Manufacturer

onsemi

Introduction

The MJD127T4G is a high voltage, high current PNP Darlington transistor in a DPAK (TO-252) package.

Product Features and Performance

High voltage capability up to 100V

High current rating up to 8A

High current gain of 1000 minimum at 4A, 4V

Wide operating temperature range from -65°C to 150°C

Surface mount DPAK package

Product Advantages

Ideal for high power switching and amplifier applications

Robust DPAK package provides efficient thermal dissipation

Excellent current handling capability

High reliability performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 100V

Collector Current (IC): 8A

Collector Cutoff Current (ICBO): 10A

DC Current Gain (hFE): 1000 minimum at 4A, 4V

Transition Frequency (fT): 4MHz

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Can be used as a direct replacement for other high voltage, high current PNP Darlington transistors in similar packages.

Application Areas

High power switching circuits

Power amplifiers

Motor control

Industrial power electronics

Product Lifecycle

The MJD127T4G is an active and widely available product. Onsemi continues to manufacture and support this component, and there are no plans for discontinuation in the near future.

Key Reasons to Choose This Product

Excellent high voltage and high current capability

High current gain for efficient power control

Robust DPAK package with efficient thermal dissipation

Wide operating temperature range for diverse applications

RoHS3 compliance for use in modern electronic systems

Tape and reel packaging for automated assembly