MJD148T4G - onsemi

Manufacturer Part Number

MJD148T4G

Manufacturer

onsemi

Introduction

The MJD148T4G is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of power switching and amplification applications.

Product Features and Performance

Capable of handling up to 4A of collector current

Operates at high voltages up to 45V

Transition frequency of 3MHz allows for high-speed switching

Low collector-emitter saturation voltage for efficient power conversion

Product Advantages

Robust DPAK package provides excellent thermal performance and reliability

RoHS3 compliant for environmentally-friendly use

Wide operating temperature range of -65°C to 150°C

Key Technical Parameters

Power Rating: 1.75W

Collector-Emitter Breakdown Voltage: 45V

Collector Current (Max): 4A

Collector Cutoff Current: 20A

DC Current Gain (hFE): 85 minimum

Quality and Safety Features

ROHS3 compliant for hazardous substance restrictions

Reliable DPAK package construction

Compatibility

Surface mount DPAK package compatible with standard SMT assembly processes

Application Areas

Power switching circuits

Amplifier circuits

Motor drives

Industrial control systems

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacements and upgrades may be available within the onsemi BJT transistor product line.

Key Reasons to Choose This Product

High-performance power handling capabilities

Efficient power conversion with low saturation voltage

Robust and reliable DPAK package

Wide operating temperature range

RoHS3 compliance for environmental responsibility